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| PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l High sensitivity at visible range l Low noise l High gain l Low capacitance l Low-light-level measurement l Analytical equipment General ratings / Absolute maximum ratings Dimensional outline /Window material *1 Effective *2 active area size (mm) 0.2 0.5 1.0 2.0 3.0 5.0 5x5 10 x 10 Effective active area (mm2) 0.03 0.19 0.78 3.14 7.0 19.6 25 100 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (C) (C) Type No. Package S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 /K TO-5 -55 to +100 -20 to +60 /K /E /E TO-8 Ceramic -20 to +80 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Photo Quantum Spectral Peak * 3 Breakdown Excess *3 Temperature sensitivity efficiency Dark *3 Cut-off Terminal * 3 Gain response sensitivity Noise voltage coefficient of frequency capacitance current M S QE range wavelength index VBR M=1 M=1 VBR fc Ct ID =420 nm Type No. ID=100 A p =420 nm =420 nm =420 nm Typ. Max. Typ. Max. (nm) (nm) (A/W) (%) (V) (V) (V/C) (nA) (nA) (MHz) (pF) S8664-02K 0.1 1 700 0.8 S8664-05K 0.2 1.5 680 1.6 S8664-10K 0.3 3 530 4 S8664-20K 0.6 6 280 11 320 to 600 0.24 70 400 500 0.78 0.2 50 1000 S8664-30K 1 15 140 22 S8664-50K 3 35 60 55 S8664-55 5 50 40 80 S8664-1010 10 100 11 270 *1: K: Borosilicate glass E: Epoxy resin *2: Area in which a typical gain can be obtained. *3: Values measured at a gain listed in the characteristics table. 1 Si APD s Spectral response 25 S8664-55/-1010 20 (Typ. M=50) S8664 series s Quantum efficiency vs. wavelength 100 (Typ. Ta=25 C) S8664-55/-1010 QUANTUM EFFICIENCY (%) PHOTO SENSITIVITY (A/W) S8664-02K/-05K/-10K/ -20K/-30K/-50K 80 15 60 S8664-02K/-05K/-10K/ -20K/-30K/-50K 10 40 5 20 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 WAVELENGTH (nm) KAPDB0073EB WAVELENGTH (nm) KAPDB0074EB s Dark current vs. reverse voltage 1 A (Typ. Ta=25 C) s Gain vs. reverse voltage 1000 (Typ. =420 nm) 100 nA S8664-55 S8664-50K -20 C 100 0 C S8664-1010 S8664-30K DARK CURRENT 10 nA 1 nA GAIN 20 C 100 pA S8664-10K S8664-02K 1 pA 100 10 40 C 10 pA 60 C 200 300 400 500 1 200 300 400 500 REVERSE VOLTAGE (V) KAPDB0075EB REVERSE VOLTAGE (V) KAPDB0076EB s Terminal capacitance vs. reverse voltage 10 nF S8664-55 (Typ. Ta=25 C, f=10 kHz) S8664-1010 S8664-30K S8664-50K TERMINAL CAPACITANCE 1 nF 100 pF 10 pF 1 pF S8664-10K 100 fF S8664-02K 200 300 400 500 0 100 REVERSE VOLTAGE (V) KAPDB0077EB 2 Si APD s Dimensional outlines (unit: mm) S8664-02K/-05K/-10K/-20K 9.1 0.2 8.1 0.1 5.9 0.1 Y S8664 series S8664-30K/-50K 13.9 0.2 12.35 0.1 10.5 0.2 X ACTIVE AREA a ACTIVE AREA a 4.2 0.2 PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 2.8 0.4 MAX. (20) 0.5 MAX. 3.1 0.45 LEAD 0.45 LEAD 7.5 0.2 5.08 0.2 The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. INDEX MARK 1.4 Type No. 1.5 MAX. CASE S8664-02K S8664-05K S8664-10K S8664-20K a 0.2 0.5 1.0 2.0 1.0 MAX. The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. CASE Type No. S8664-30K S8664-50K (15) 4.9 a 3.0 5.0 KAPDA0027EA KAPDA0026EA S8664-55 10.6 5.0 ACTIVE AREA 5x5 S8664-1010 (4 x) C0.5 13.7 ACTIVE AREA 10 x 10 14.5 PHOTOSENSITIVE SURFACE EPOXY RESIN 1.65 PHOTOSENSITIVE SURFACE 1.78 (0.2) 0.4 * 9.0 5.0 EPOXY RESIN 0.3 MAX. 5.0 0.80 5 0.70 0.45 1.5 5.08 5.08 0.46 2.0 6.0 0.5 1.18 1.2 * From center of active area to center of package (3.0) (5.5) INDEX MARK General tolerance: 0.2 0.5 (2 x) 2 KAPDA0022EA General tolerance: 0.2 KAPDA0036EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KAPD1012E04 Sept. 2005 DN |
Price & Availability of S8664-1010
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